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ZVN4210A 145A0 UPD98411 08500 CXP84220 MR850G DB105 SLA5038
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  1 features mechanical data maximum ratixgs and electrical characteristics u n i t s 0 c p f n s - 5 0 t o + 1 5 0 a symbol v o l t s v o l t s v o l t s a m p s a m p s v o l t s 0 c / w v rrm v rms v dc i (av) i fsm v f i r r jc c j t j t stg 1.0 30 10 100 30 17 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 o ratings at 25 c ambient temperature unless otherwise specified single phase, half wave, 60hz, resistive or inductive load for capacitive load, derate current by 20% us 1a b th ru u s1m b ultra fast rectifiers forward current - 1.0 amperes surface mount reverse vol tage 50 to 1000 vol ts surface mount reverse vol tage 50 to 1000 vol ts for surface mounted applications low profile package built-in strain relief easy pick and place ultrafast recovery times for high efficiency plastic package has underwriters laboratory flammability classification 94v-0 glass passivated junction high temperature soldering o 260 c/10seconds at terminals case jedec do-214aa molded plastic t erminals solder plated, solderable per mil-std-750, method 2026 polarity indicated by cathode band standard packaging 12mm tape (ela-481) weight 0.003 ounce, 0.093grams maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage 0 maximum average forward rectified current @ t l =100 c peak forward surge current 8.3ms single half sine- wave 0 superimposed on rated load (jedec method) t a =55 c maximuminstantaneous forward voltage at 1.0a dc 0 maximum dc reverse current @t a =25 c 0 at rated dc blocking voltage @t a =100 c typical junctionn capacitance (no te 2) 0 maximum reverse recovery time (note 1) t j =25 c maximum thermal resistance (note 3) operating and storage temperature range notes 1. rverse recovery test condibons i f = 5a, i r = 1a, l rr = 0.25a 2. measured at 1 mhz and applied reverse voltag of 4.0vdc 2 3. 8.3mm (0.13mm thick) land areas. t rr 50 75 us1ab us1bb US1DB us1gb us1jb us1kb us1mb 1.0 1.3 1.5 1.7 s m b / d o - 2 1 4 a a dime nsion s in in ches and ( millim eters ) .1 30 (3 .3 0) .1 55 (3 .9 4) .0 06 (.1 52 ) .0 12 (.3 05 ) .2 00 (5 .0 8) .0 04 (.1 02 ) .1 60 (4 .0 6) .0 75 (1 .9 1) .0 83 (2 .1 1) .0 83 (2 .1 3) .0 96 (2 .4 4) .0 30 (0 .7 6) .0 50 (1 .2 7) .1 85 (4 .7 0) .0 08 (.2 03 ) .2 20 (5 .5 9) www.paceleader.tw
2 ratings and characteristic curves us1ab thru us1mb us 1ab th ru u s1mb surface mount reverse vol tage 50 to 1000 vol ts surface mount reverse vol tage 50 to 1000 vol ts fig . 1 - r ev er se re co ve ry ti me ch ar ac te ris tic an d t es t c irc uit di ag ra m 50 no nin duc tive 1 no n- ind uct ive no tes :1. ris e t ime =7 ns m ax. in put im ped anc e= 1 m ego hm . 22 pf 2. r ise tim e= 10n s m ax. s our ce i mp eda nce =5 0 o hm s. 10 no nin duc tive d.u .t. os cil los co pe no te 1 pul se ge ner ato r no te 2 25 vdc (ap pro x) (+) (+) () () set time base for 10ns/cm 1cm -1.0 -0.25 0 +0.5a t rr fig . 2 - f or wa rd ch ar ac te ris tic s fig . 4 - f or wa rd cu rr en t d er at ing cu rv e 2.0 1.0 25 50 7 5 1 00 1 25 15 0 175 o lea d t em per atu re , c a v e r a g e f o r w a r d c u r r e n t , a m p e r e s sing le ph ase half w ave 60h z resi stive or indu ctiv e lo ad p.c.b m ount ed on 0 .315x 0.315 "(8.0x 8.0m m) copp er pa d are as 0 .2 .4 .6 .8 1.0 1.2 1.4 10 1.0 0.1 .01 0 t =2 5 c j ty pic al us1ab us1gb uf1mb i a p k f m , 30 25 20 15 10 5 8.3ms single half since-wave jedec method 1 2 5 10 20 50 100 fig. 5 - peak forward surge current number of cycles at 60hz p e a k f o r w a r d s u r g e c u r r e n t , a m p e r e s 100 10 1 0.1 1 10 100 fig. 3 - typical junction capacitance reverse volt age, volts 0 t j =2 5 c f= 1.0 m hz vs ig= 50 mv p- p j u n c t i o n c a p a c i t a n c e , p f www.paceleader.tw


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